Datasheet Summary
FDP61N20 200V N-Channel MOSFET
September 2005
UniFET
FDP61N20
200V N-Channel MOSFET Features
- 61A, 200V, RDS(on) = 0.041Ω @VGS = 10 V
- Low gate charge ( typical 58 nC)
- Low Crss ( typical 80 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficient switched mode power...
