Part Number	2406KL Datasheet
Manufacturer	NMB-MAT
Overview	These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min. * 61A, 200V, RDS(on) = 0.041Ω @VGS = 10 V * Low gate charge ( typical 58 nC) * Low Crss ( typical 80 pF) * Fast switching * 100% avalanche tested * Improved dv/dt capability TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, p.