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2N2222A Datasheet Preview

2N2222A Datasheet

Silicon NPN Transistor

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2N2222A
Silicon NPN Transistor
Small Signal General Purpose Amplifier & Switch
TO18 Type Package
Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
CollectorBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V
EmitterBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mA
Total
Device Dissipation,
TTAC
=
=
+25C
+25C
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500mW
. . . 1W
Operating Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65to +200C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65to +200C
Thermal Resistance, JunctiontoAmbient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 325C/W
Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150C/W
Note 1. Stresses exceeding Absolute Maximum Ratings may damage the devices. Maximum ratings
are stress ratings only. Functional operation above the Recommended Operating Conditions
is not implied. Extended exposure to stresses above the Recommended Operating Conditions
may affect device reliability.
Electrical Characteristics: (TA = 25C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
CollectorEmitter Breakdown Voltage
CollectorBase Cutoff Current
EmitterBase Cutoff Current
CollectorEmitter Cutoff Current
V(BR)CEO
ICBO
IEBO
ICES
IC = 10mA
VCB = 60V
VCB = 75V
VEB = 4V
VEB = 6V
VCE = 50V
Min Typ Max Unit
50
V
− − 10 nA
− − 10 A
− − 10 nA
− − 10 A
− − 50 nA




NTE

2N2222A Datasheet Preview

2N2222A Datasheet

Silicon NPN Transistor

No Preview Available !

Electrical Characteristics (Cont’d): (TA = 25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max
ON Characteristics (Note 1)
DC Current Gain
CollectorEmitter Saturation Voltage
BaseEmitter Saturation Voltage
SmallSignal Characteristics
hFE
VCE(sat)
VBE(sat)
VCE = 10V IC = 0.1mA
IC = 1mA
IC = 10mA
IC = 150mA
IC = 500mA
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
50
75 325
100
100 300
30
− − 0.3
− − 1.0
0.6 1.2
− − 2.0
Magnitude of Small-Signal Current Gain
SmallSignal Current Gain
Input Capacitance
Output Capacitance
Switching Characteristics
|hfe| IC = 20mA, VCE = 20V, f = 100MHz 2.5
hfe IC = 1mA, VCE = 10V, f = 1kHz
50
Cibo VEB = 5V, IC = 0, 100kHz f 1MHz
− − 25
Cobo VCB = 10V, IE = 0, 100kHz f 1MHz
−−8
TurnOn Time
TurnOff Time
ton
toff
− − 35
− − 300
Note 1. Pulse Test: Pulse Width 300s, Duty Cycle 2%.
Unit
V
V
V
V
pF
pF
ns
ns
.230 (5.84) Dia Max
.195 (4.95) Dia Max
.210
(5.33)
Max
.030 (.762) Max
.500
(12.7)
Min
Emitter
45
.018 (0.45)
Base
Collector
.041 (1.05)


Part Number 2N2222A
Description Silicon NPN Transistor
Maker NTE
Total Page 2 Pages
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