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2N2904 Datasheet Preview

2N2904 Datasheet

Silicon PNP Transistor

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2N2904
Silicon PNP Transistor
General Purpose
TO39 Type Package
Description:
The 2N2904 is a silicon PNP transistor in a TO39 type package designed for small signal, general
purpose and switching applications.
Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
CollectorBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
EmitterBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA
Total
Device Dissipation,
TTAC
=
=
+25C
+25C
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800mW
. . . 3W
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
CollectorBase Breakdown Voltage
CollectorEmitter Breakdown Voltage
EmitterBase Breakdown Voltage
CollectorEmitter Saturation Voltage
BaseEmitter Saturation Voltage
DC Current Gain
ICBO
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCE(sat)
VBE(sat)
hFE
VCB = 50V
IC = 10A
IC = 10mA
IE = 10A
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
IC = 100A, VCE = 10V
IC = 1mA, VCE = 10V
IC = 10mA, VCE = 10V
IC = 150mA, VCE = 10V
IC = 500mA, VCE = 10V
Min Typ Max Unit
− − 20 nA
60 − − V
40 − − V
5 −−V
− − 0.4 V
− − 1.6 V
− − 1.3 V
− − 2.6 V
20
25
35
40 120
20




NTE

2N2904 Datasheet Preview

2N2904 Datasheet

Silicon PNP Transistor

No Preview Available !

Electrical Characteristics (Cont’d): TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
CurrentGain Bandwidth Product
Output Capacitance
TurnOn Time
TurnOff Time
fT IC = 50mA, VCE = 20V, f = 100MHz 200
MHz
Cobo VCB = 10V, f = 100kHz
− − 8 pF
ton VCC = 30V, IC = 150mA, IB = 15mA
45 ns
toff VIBC1C==IB62V=, I1C5=m1A50mA,
− − 180 ns
.260
(6.6)
Max
.370 (9.39) Dia Max
.355 (9.03) Dia Max
.500
(12.7)
Min
Emitter
.018 (0.45)
Base
Collector/Case
45
.031 (.793)


Part Number 2N2904
Description Silicon PNP Transistor
Maker NTE
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2N2904 Datasheet PDF






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