2N2904E - EPITAXIAL PLANAR NPN TRANSISTOR

KEC

Key Features

Low Leakage Current : ICEX=50nA(Max. ), IBL=50nA(Max. ) @VCE=30V, VEB=3V. Excellent DC Current Gain Linearity. Low Saturation Voltage : VCE(sat)=0.3V(Max. ) @IC=50mA, IB=5mA. Low Collector Output Capacitance : Cob=4pF(Max. ) @VCB=5V.

2N2904E epitaxial planar npn transistor by KEC - Datasheet Preview

Datasheet Details

Part number	2N2904E
Manufacturer	KEC
File Size	49.46 KB
Description	EPITAXIAL PLANAR NPN TRANSISTOR
Datasheet	2N2904E Datasheet

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SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Low Leakage Current : ICEX=50nA(Max.), IBL=50nA(Max.) @VCE=30V, VEB=3V. Excellent DC Current Gain Linearity. Low Saturation Voltage : VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA. Low Collector Output Capacitance : Cob=4pF(Max.) @VCB=5V. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range * Total Rating VCBO VCEO VEBO IC IB PC * Tj Tstg RATING 60 40 6 200 50 200 150 -55 150 UNIT V V V mA mA mW H A A1 CC 2N2904E EPITAXIAL PLANAR NPN TRANSISTOR B B1 1 6 DIM MILLIMETERS A 1.6+_ 0.05 A1 1.0 +_ 0.05 2 5 B 1.6+_ 0.05 B1 1.2 +_ 0.