KEC 2N2904E
EPITAXIAL PLANAR NPN TRANSISTOR
| Part No. | 2N2904E |
|---|---|
| Datasheet | 2N2904E Download |
| Manufacturer |  KEC |
| Description | EPITAXIAL PLANAR NPN TRANSISTOR |
| Buy | Stock & Price |
FEATURES
Low Leakage Current : ICEX=50nA(Max.), IBL=50nA(Max.) @VCE=30V, VEB=3V. Excellent DC Current Gain Linearity. Low Saturation Voltage : VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA. Low Collector Output Capacitance : Cob=4pF(Max.) @VCB=5V. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range * Total Rating VCBO VCEO VEBO IC IB PC * Tj Tstg RATING 60 40 6 200 50 200 150 -55 150 UNIT V V V mA mA mW H A A1 CC 2N2904E EPITAXIAL PLANAR NPN TRANSISTOR B B1 1 6 DIM MILLIMETERS A 1.6+_ 0.05 A1 1.0 +_ 0.05 2 5 B 1.6+_ 0.05 B1 1.2 +_ 0.05 3 4 C 0.50 D 0.2+_ 0.05 H 0.5+_ 0.05 J 0.12+_ 0.05 PP P5 1. Q1 EMITTER 2. Q1 BASE 3. Q2 COLLECTOR 4. Q2 EMITTER 5. Q2 BASE 6. Q1 COLLECTOR TES6 EQUIVALENT CIRCUIT (TOP VIEW) 65 4 Q1 Q2 12 3 JD Marking 654 ZCType Name Lot No. 123 2008. 9. 23 Revision No : 3 1/4 2N2904EELECTRICAL CHARACTERISTICS
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