2N2906E Datasheet PDF

FEATURES

Low Leakage Current : ICEX=-50nA(Max.), IBL=-50nA(Max.) @VCE=-30V, VEB=-3V. Excellent DC Current Gain Linearity. Low Saturation Voltage : VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA. Low Collector Output Capacitance : Cob=4.5pF(Max.) @VCB=5V. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range * Total Rating VCBO VCEO VEBO IC IB PC Tj Tstg RATING -40 -40 -5 -200 -50 200 150 -55 150 UNIT V V V mA mA mW H A A1 CC 2N2906E EPITAXIAL PLANAR PNP TRANSISTOR B B1 1 6 DIM MILLIMETERS A 1.6+_ 0.05 A1 1.0 +_ 0.05 2 5 B 1.6+_ 0.05 B1 1.2 +_ 0.05 3 4 C 0.50 D 0.2+_ 0.05 H 0.5+_ 0.05 J 0.12+_ 0.05 PP P5 1. Q1 EMITTER 2. Q1 BASE 3. Q2 BASE 4. Q2 COLLECTOR 5. Q2 EMITTER 6. Q1 COLLECTOR TES6 EQUIVALENT CIRCUIT (TOP VIEW) 65 4 Q1 Q2 12 3 JD Marking Type Name ZA 2002. 9. 17 Revision No : 0 1/4 2N2906E

ELECTRICAL CHARACTERISTICS

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