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2N2907A - SILICON PLANAR EPITAXIAL PNP TRANSISTOR

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SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2907A • Low Power • Hermetic TO-18 Metal package. • Ideally suited for High Speed Switching and General Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage -60V VCEO Collector – Emitter Voltage -60V VEBO Emitter – Base Voltage -5V IC Continuous Collector Current -600mA PD Total Power Dissipation at TA = 25°C 400mW Derate Above 25°C 2.28mW/°C PD Total Power Dissipation at TC = 25°C 1.8W Derate Above 25°C 10.