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SILICON PLANAR EPITAXIAL PNP TRANSISTOR
2N2906
• Low Power • Hermetic TO-18 Metal package. • Ideally suited for High Speed Switching
and General Purpose Applications • Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
-60V
VCEO
Collector – Emitter Voltage
-40V
VEBO
Emitter – Base Voltage
-5V
IC Continuous Collector Current
-600mA
PD Total Power Dissipation at TA = 25°C
400mW
Derate Above 25°C
2.3mW/°C
PD Total Power Dissipation at TC = 25°C
1.8W
Derate Above 25°C
10.3mW/°C
TJ Junction Temperature Range
-65 to +200°C
Tstg Storage Temperature Range
-65 to +200°C
THERMAL PROPERTIES
Symbols Parameters
RθJA
Thermal Resistance, Junction To Ambient
RθJC
Thermal Resistance, Junction To Case
Min.
2N2906 Datasheet
