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2N2906 Datasheet PDF

TT 2N2906

SILICON PLANAR EPITAXIAL PNP TRANSISTOR

Part No. 2N2906
Datasheet 2N2906 Download
Manufacturer
TT
Description SILICON PLANAR EPITAXIAL PNP TRANSISTOR
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2N2906 datasheet page 1 preview

APPLICATIONS

● Screening Options Available

ABSOLUTE MAXIMUM RATINGS

(TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage -60V VCEO Collector – Emitter Voltage -40V VEBO Emitter – Base Voltage -5V IC Continuous Collector Current -600mA PD Total Power Dissipation at TA = 25°C 400mW Derate Above 25°C 2.3mW/°C PD Total Power Dissipation at TC = 25°C 1.8W Derate Above 25°C 10.3mW/°C TJ Junction Temperature Range -65 to +200°C Tstg Storage Temperature Range -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJA Thermal Resistance, Junction To Ambient RθJC Thermal Resistance, Junction To Case Min. Typ. Max. Units 437.5 °C/W 97.2 °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furni
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