NXP Semiconductors 2N2906A
PNP switching transistors
FEATURES
● High current (max. 600 mA)● Low voltage (max. 60 V).
APPLICATIONS
● High-speed switching● Driver applications for industrial service. 1 handbook, halfpage 2N2906; 2N2906A PINNING PIN 1 2 3 emitter base collector, connected to case
DESCRIPTION
3 2DESCRIPTION
PNP switching transistor in a TO-18 metal package. NPN complements: 2N2222 and 2N2222A. 3 2 MAM263 1 Fig.1 Simplified outline (TO-18) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCEO PARAMETER collector-base voltage collector-emitter voltage 2N2906 2N2906A IC Ptot hFE fT toff collector current (DC) total power dissipation DC current gain transition frequency turn-off time Tamb ≤ 25 °C IC = −150 mA; VCE = −10 V IC = −50 mA; VCE = −20 V; f = 100 MHz ICon = −150 mA; IBon = −15 mA; IBoff = 15 mA open emitter open base − − − − 40 200 − −40 −60 −600 400 120 − 300 MHz ns V V mA mW CONDITIONS − MIN. MAX. −60 V UNIT 1997 Jun 02 2 Philips Semiconductors Product specification PNP switching transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).