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2N2906A Datasheet PDF

Comset Semiconductor 2N2906A

The 2N2906 and 2N2906A are PNP transistors mounted in TO-18 metal package. They are intended for high speed switching and general purpose applications.
Part No. 2N2906A
Datasheet 2N2906A Download
Manufacturer
Comset Semiconductor
Description General Purpose Amplifier Transistors
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2N2906A datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

Symbol VCEO VCBO VEBO IC ICM IBM Ratings Collector-Emitter Voltage (IB=0) Collector-Base Voltage (IE=0) Emitter-Base Voltage (IC=0) Value 2N2906 -40 -60 -5 -600 -800 -200 Tamb = 25° 0.4 1.2 200 -65 to +150 -65 to +150 Unit -60 V V V mA mA mA W W °C °C °C 2N2906A Collector Current Peak Collector Current Peak Base Current PD Total Power Dissipation Tcase= 25° TJ TStg Tamb Junction Temperature Storage Temperature range Operating Ambient Temperature THERMAL CHARACTERISTICS Symbol RthJ-a RthJ-c Ratings Thermal Resistance, Junction to ambient in free air Thermal Resistance, Junction to case Value 438 146 Unit °C/W °C/W Datasheet pdf - PNP 2N2906 – 2N2906A

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted Symbol ICBO ICBO IEBO VCEO VCBO VEBO Ratings Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current (*) Collector Emitter Breakdown Voltage Collector Base Breakdown Voltage Emitter Base Breakdown Voltage Test Condition(s) VCB= -50 V Ta= 25°C...
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