Multicomp 2N2906A
High Speed Switching Transistor
FEATURES
:● PNP silicon planar switching transistors
● Fast switching devices exhibiting short turn-off and low saturation voltage characteristics
● Switching and linear application DC and VHF amplifier applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation @ Ta = 25ºC Derate above 25ºC Power Dissipation @ Tc = 25ºC Derate Above 25ºC Operating and Storage Junction Temperature Range Symbol Vceo Vcbo Vebo Ic Pd Pd Tj, Tstg Value 60 5 600 400 2.28 1.8 10.3 -55 to +175 Unit V mA mW mW/ ºC W mW/ ºC ºC Pin Configuration 1. Emitter 2. Base 3. CollectorELECTRICAL CHARACTERISTICS
(Ta = 25ºC unless specified otherwise)DESCRIPTION
Symbol Test Condition Collector Emitter Voltage *Vceo Ic=10mA, Ib=0 Collector Base Voltage Vcbo Ic=10µA, Ie=0 Emitter Base Voltage Vebo Ie=10µA, Ic=0 Collector Cut Off Current