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2N2906A - High Speed Switching Transistor

General Description

Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation @ Ta = 25ºC Derate above 25ºC Power Dissipation @ Tc = 25ºC Derate Above 25ºC Operating and Storage Junction Temperature Range Symbol Vceo Vcbo Vebo Ic Pd Pd Tj, Tstg Value 60 5 6

Key Features

  •   PNP silicon planar switching transistors.
  •   Fast switching devices exhibiting short turn-off and low saturation voltage characteristics.
  •   Switching and linear.

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Datasheet Details

Part number 2N2906A
Manufacturer Multicomp
File Size 282.71 KB
Description High Speed Switching Transistor
Datasheet download datasheet 2N2906A Datasheet

Full PDF Text Transcription (Reference)

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High Speed Switching Transistor Features: •  PNP silicon planar switching transistors •  Fast switching devices exhibiting short turn-off and low saturation voltage characteristics •  Switching and linear application DC and VHF amplifier applications Absolute Maximum Ratings Description Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation @ Ta = 25ºC Derate above 25ºC Power Dissipation @ Tc = 25ºC Derate Above 25ºC Operating and Storage Junction Temperature Range Symbol Vceo Vcbo Vebo Ic Pd Pd Tj, Tstg Value 60 5 600 400 2.28 1.8 10.3 -55 to +175 Unit V mA mW mW/ ºC W mW/ ºC ºC Pin Configuration 1. Emitter 2. Base 3.