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NTE

2N4400 Datasheet Preview

2N4400 Datasheet

Silicon NPN Transistor

No Preview Available !

2N4400 & 2N4401
Silicon NPN Transistor
General Purpose
TO92 Type Package
Absolute Maximum Ratings:
CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
CollectorBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
EmitterBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA
Total
DDeveircaeteDAisbsoipvaeti2o5n5(CTA.
=
..
+255C),
.......
.P.D.
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. . 625mW
5.0mW/5C
Total
DDeveircaeteDAisbsoipvaeti2o5n5(CTC.
=
..
.+.2.5.5.C.).,.P. D. .
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. . . . 1.5W
12mW/5C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 555 to +1505C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 555 to +1505C
Thermal Resistance, Junction to Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.35C/W
Thermal Resistance, Junction to Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2005C/W
Electrical Characteristics: (TA = +255C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
CollectorEmitter Breakdown Voltage
CollectorBase Breakdown Voltage
EmitterBase Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON Characteristics (Note 1)
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICEX
IBEV
IC = 1mA, IB = 0, Note 1
IC = 0.1mA, IE = 0
IE = 0.1mA, IC = 0
VCE = 35V, VEB = 0.4V
VCE = 35V, VEB = 0.4V
DC Current Gain
2N4401
hFE VCE = 1V, IC = 0.1mA
2N4400
2N4401
VCE = 1V, IC = 1mA
2N4400
2N4401
VCE = 1V, IC = 10mA
2N4400
2N4401
VCE = 1V, IC = 150mA
2N4400
2N4401
VCE = 2V, IC = 500mA
Note 1. Pulse Test: Pulse Width 3 3005 s, Duty Cycle 3 2%.
Min Typ Max Unit
40 − −
V
60 − −
V
6−−
V
− − 0.1 5 A
− − 0.1 5 A
20 − −
20 − −
40 − −
40 − −
80 − −
50 150
100 300
20 − −
40 − −




NTE

2N4400 Datasheet Preview

2N4400 Datasheet

Silicon NPN Transistor

No Preview Available !

Electrical Characteristics (Cont’d): (TA = +255C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
ON Characteristics (Cont’d) (Note 1)
CollectorEmitter Saturation Voltage
BaseEmitter Saturation Voltage
SmallSignal Characteristics
VCE(sat)
VBE(sat)
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
− − 0.4
− − 0.75
0.75 0.95
− − 1.2
V
V
V
V
Current GainBandwidth Product
2N4400
fT IC = 20mA, VCE = 10V, f = 100MHz 200 − − MHz
2N4401
250 − − MHz
CollectorBase Capacitance
EmitterBase Capacitance
Input Impedance
2N4400
Ccb VCB = 5V, IE = 0, f = 100kHz
Ceb VBE = 0.5V, IC = 0, f = 100kHz
hie IC = 1mA, VCE = 10V, f = 1kHz
− − 6.5
− − 30
0.5 7.5
pF
pF
k3
2N4401
Voltage Feedback Ratio
SmallSignal Current Gain
2N4400
hre IC = 1mA, VCE = 10V, f = 1kHz
hfe IC = 1mA, VCE = 10V, f = 1kHz
1.0 15 k3
0.1 8.0 x 104
20 250
2N4401
40 500
Output Admittance
Switching Characteristics
hoe IC = 1mA, VCE = 10V, f = 1kHz
1.0 30 5 mhos
Delay Time
Rise Time
Storage Time
Fall Time
td
tr
VIBC1C==153m0VA, VEB = 2V, IC = 150mA,
− − 15
− − 20
ns
ns
ts
tf
VIBC1C==IB320=V,1I5Cm=A150mA,
− − 225 ns
− − 30 ns
Note 1. Pulse Test: Pulse Width 3 3005 s, Duty Cycle 3 2%.


Part Number 2N4400
Description Silicon NPN Transistor
Maker NTE
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2N4400 Datasheet PDF





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