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2N6666 - Silicon PNP Transistors

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NTE

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2N6666 Silicon PNP Transistors by NTE - Datasheet Preview — Datasheet preview – 2N6666

Datasheet Details

Part number	2N6666
Manufacturer	NTE
File Size	64.42 KB
Description	Silicon PNP Transistors
Datasheet	2N6666 Datasheet
Additional preview pages of the 2N6666 datasheet.

Product details

Description

The 2N6666, 2N6667, and 2N6668 are silicon PNP Darlington power transistors in a TO 220 type package designed for general purpose amplifier and low speed switching applications.

Features

D DC Current Gain: hFE = 3000 (Typ) @ IC = 4A D Collector.
Emitter Sustaining Voltage: VCEO(sus) = 40V (Min).
2N6666 = 60V (Min).
2N6667 = 80V (Min).
2N6668 D Low Collector.
Emitter Saturation Voltage: VCE(sat) = = 2V 2V Max Max @ @ IICC = = 3A 5A.
2N6666 2N6667, 2N6668 Absolute Maximum Ratings: Collector.
Emitter 2N6666 . . Voltage, V. . C. E. O.

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Published: Jul 6, 2018 |