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2N6666 Datasheet - NTE

Silicon PNP Transistors

2N6666 Features

* D DC Current Gain: hFE = 3000 (Typ) @ IC = 4A D Collector

* Emitter Sustaining Voltage: VCEO(sus) = 40V (Min)

* 2N6666 = 60V (Min)

* 2N6667 = 80V (Min)

* 2N6668 D Low Collector

* Emitter Saturation Voltage: VCE(sat) = = 2V 2V Max Max @ @ IICC = = 3A

2N6666 Datasheet (64.42 KB)

Preview of 2N6666 PDF

Datasheet Details

Part number:

2N6666

Manufacturer:

NTE

File Size:

64.42 KB

Description:

Silicon pnp transistors.

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2N6666 Silicon PNP Transistors NTE

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