2N6666 Datasheet Silicon PNP Transistors

Manufacturer: NTE Electronics (defunct)

2N6666 silicon pnp transistors by NTE Electronics (defunct) - Datasheet Preview

Datasheet Details

Part number	2N6666
Manufacturer	NTE Electronics (defunct)
File Size	64.42 KB
Description	Silicon PNP Transistors
Download	2N6666 Download (PDF)

General Description

: The 2N6666, 2N6667, and 2N6668 are silicon PNP Darlington power transistors in a TO−220 type package designed for general purpose amplifier and low−speed switching applications.

Overview

2N6666, 2N6667, 2N6668 Silicon PNP Transistors Darlington Power Amplifier TO−220 Type.

Key Features

D DC Current Gain: hFE = 3000 (Typ) @ IC = 4A D Collector.
Emitter Sustaining Voltage: VCEO(sus) = 40V (Min).
2N6666 = 60V (Min).
2N6667 = 80V (Min).
2N6668 D Low Collector.
Emitter Saturation Voltage: VCE(sat) = = 2V 2V Max Max @ @ IICC = = 3A 5A.
2N6666 2N6667, 2N6668 Absolute Maximum Ratings: Collector.
Emitter 2N6666 . . Voltage, V. . C. E. O.

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