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NTE

D44C11 Datasheet Preview

D44C11 Datasheet

Silicon NPN Transistor

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D44C11
Silicon NPN Transistor
Power Amp Driver, Output, Switch
TO220 Type Package
Description:
The D44C11 silicon NPN transistors in a TO220 type package designed for various specific and gen-
eral purpose amplifications such as output and driver stages of amplifiers operating at frequencies
from DC to greater than 1.0MHz, series, shunt and switching regulators, low and high frequency in-
verters/converters and many others.
Features:
D Very Low CollectorEmitter Saturation Voltage
D excellent Linearity
D Fast Switching
Absolute Maximum Ratings:
CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
CollectorEmitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V
EmitterBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30W
Derate Above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.24W/C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55to +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55to +150C
Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.8C/W




NTE

D44C11 Datasheet Preview

D44C11 Datasheet

Silicon NPN Transistor

No Preview Available !

Electrical Characteristics: (TC = +25C, Note 3 unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics
Collector Cutoff Current
Emitter Cutoff Current
ON Characteristics (Note 1)
ICES
IEBO
VCE = 90V
VEB = 5V, IC = 0
10 A
100 A
DC Current Gain
CollectorEmitter Saturation Voltage
BaseEmitter Saturation Voltage
Dynamic Characteristics
hFE
VCE(sat)
VBE(sat)
VCE = 1V, IC = 200mA
VCE = 1V, IC = 2A
IC = 1A, IB = 50mA
IC = 1A, IB = 100mA
100 220
20
0.5 V
1.3 V
CurrentGain Bandwidth Product
fT IC = 20mA, VCE = 4V, f = 1MHz,
Note 2
50 MHz
Switching Times
Rise Time
Storage Time
Fall Time
tr
IC = 1A, VCC = 20V,
ts
IB1 = IB2 = 100mA
tf
0.3 s
0.7 s
0.4 s
Note 1. Pulse Test: Pulse width = 300s, Duty Cycle 2%.
Note 2. fT = |hfe| ftest.
.147 (3.75)
Dia Max
.420 (10.67)
Max
.110 (2.79)
.500 (12.7)
Max
.070 (1.78) Max
Base
.100 (2.54)
.250
(6.35)
Max
.500
(12.7)
Min
Emitter
Collector/Tab


Part Number D44C11
Description Silicon NPN Transistor
Maker NTE
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D44C11 Datasheet PDF






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