NTE102 transistors equivalent, germanium complementary transistors.
D Low Collector
–Emitter Saturation Voltage: VCE(sat) = 200mV Max @ IC = 24mA D High Emitter
–Base Breakdown Voltage: V(BR)EBO = 12V Min @ .
Features: D Low Collector
–Emitter Saturation Voltage: VCE(sat) = 200mV Max @ IC = 24mA D High Emitter
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