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NTE

NTE129 Datasheet Preview

NTE129 Datasheet

Silicon Complementary Transistors

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NTE128 (NPN) & NTE129 (PNP)
Silicon Complementary Transistors
Audio Output, Video, Driver
Description:
The NTE128 (NPN) and NTE129 (PNP) are silicon complementary transistors in a TO39 type pack-
age designed primarily for amplifier and switching applications. These devices features high break-
down voltages, low leakage currents, low capacity, and a beta useful over an extremely wide current
range.
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Collector–Base Voltage, VCBO
NTE128 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140V
NTE129 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter–Base Voltage, VEBO
NTE128 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
NTE129 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Total Device Dissipation (TA = +25°C), PD
NTE128 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.6mW/°C
NTE129 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.25W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.15mW/°C
Total Device Dissipation (TC = +25°C), PD
NTE128 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28.6mW/°C
NTE129 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Thermal Resistance, Junction–to–Case, RthJC
NTE128 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16.5°C/W
NTE129 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20°C/W
Thermal Resistance, Junction–to–Ambient, RthJA
NTE128 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 89.5°C/W
NTE129 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140°C/W
Lead Temperature (During Soldering, 1/16” from case, 60sec max), TL . . . . . . . . . . . . . . . . . +300°C
Note 1. NTE129MCP is a matched complementary pair containing 1 each of NTE128 (NPN) and
NTE129 (PNP).




NTE

NTE129 Datasheet Preview

NTE129 Datasheet

Silicon Complementary Transistors

No Preview Available !

Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics
CollectorEmitter Breakdown Voltage
NTE128
NTE129
CollectorBase Breakdown Voltage
NTE128
NTE129
EmitterBase Breakdown Voltage
NTE128
NTE129
Collector Cutoff Current
NTE128
NTE129
Emitter Cutoff Current
NTE128
NTE129
ON Characteristics (Note 2)
V(BR)CEO
IC = 30mA, IB = 0
IC = 10mA
V(BR)CBO
IC = 100µA, IE = 0
IC = 10µA
V(BR)EBO
IE = 100µA, IC = 0
IE = 10µA
ICBO
VCB = 90V, IE = 0
VCB = 90V, IE = 0, TA = +150°C
VCB = 60V
VCB = 60V, TA = +150°C
IEBO
VBE = 5V, IC = 0
VBE = 5V
80 – – V
80 – – V
140 – – V
80 – – V
7––V
5––V
– – 0.01 µA
– – 10 µA
– – 50 nA
– – 50 µA
– – 0.010 µA
– – 10 µA
DC Current Gain
NTE128
NTE129
CollectorEmitter Saturation Voltage
NTE128
NTE129
BaseEmitter Saturation Voltage
NTE128
NTE129
hFE
VCE(sat)
VBE(sat)
IC = 0.1mA, VCE = 10V
IC = 10mA, VCE = 10V
IC = 150mA, VCE = 10V
IC = 150mA, VCE = 10V, TC = 55°C
IC = 500mA, VCE = 10V
IC = 1.0A, VCE = 10V
IC = 100µA, VCE = 5V
IC = 100mA, VCE = 5V
IC = 100mA, VCE = 5V, TC = 55°C
IC = 500mA, VCE = 5V
IC = 1.0A, VCE = 5V
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
IC = 150mA, IB = 15mA
50
90
100
40
50
15
75
100
40
70
25
––
––
300
––
––
––
––
300
––
––
––
0.2 V
0.5 V
0.15 V
0.5 V
1.1 V
0.9 V
BaseEmitter ON Voltage (NTE129 Only) VBE(on) IC = 500mA, VCE = 500mV
– – 1.1 V
Note 2. Pulse Test: Pulse Width 300µs, Duty Cycle 1%.


Part Number NTE129
Description Silicon Complementary Transistors
Maker NTE
Total Page 3 Pages
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