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NTE2102 Datasheet - NTE

Integrated Circuit NMOS / 1K Static RAM

NTE2102 General Description

The NTE2101 is a high *speed 1024 x 1 bit static random access read/write memory in a 16 *Lead DIP type package designed using N *Channel depletion mode silicon gate technology. Static storage cells eliminate the need for clock or refresh circuitry. Low threshold silicon gate N.

NTE2102 Datasheet (28.73 KB)

Preview of NTE2102 PDF

Datasheet Details

Part number:

NTE2102

Manufacturer:

NTE

File Size:

28.73 KB

Description:

Integrated circuit nmos / 1k static ram.

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NTE2102 Integrated Circuit NMOS Static RAM NTE

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