NTE219 Key Features
- 70 @ IC = 4A D Collector-Emitter Saturation Voltage: VCE(sat) = 1.1V (Max) @ IC = 4A D Excellent Safe Operating Area
NTE219 is Silicon Power Transistor manufactured by NTE Electronics.
| Part Number | Description |
|---|---|
| NTE21 | Silicon Complementary Transistors |
| NTE210 | Silicon Complementary Transistors |
| NTE2102 | Integrated Circuit NMOS / 1K Static RAM |
| NTE211 | Silicon Complementary Transistors |
| NTE21128 | Integrated Circuit NMOS / 128K (16K x 8) UV EPROM |
The NTE130 (NPN) and NTE219 (PNP) are silicon plementary transistors in a TO3 type case designed for general purpose switching and amplifier applications.