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NTE2350, NTE2349 Silicon Darlington Transistors

NTE2350 Description

NTE2349 (NPN) & NTE2350 (PNP) Silicon Darlington Transistors High Current, General Purpose .
The NTE2349 (NPN) and NTE2350 (PNP) are silicon complementary Darlington transistors in a TO3 type package designed for use as output devices in gene.

NTE2350 Features

* D High DC Current Gain: hFE = 1000 (Min) @ IC = 25A hFE = 400 (Min) @ IC = 50A D Diode Protection to Rated IC D Monolithic Construction w/Built
* In Base
* Emitter Shunt Resistor D Junction Temperature to +200°C Absolute Maximum Ratings: Collector
* Emitter Voltage, VCEO

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: NTE2350, NTE2349. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
NTE2350, NTE2349
Manufacturer
NTE
File Size
26.78 KB
Datasheet
NTE2349_NTEElectronics.pdf
Description
Silicon Darlington Transistors
Note
This datasheet PDF includes multiple part numbers: NTE2350, NTE2349.
Please refer to the document for exact specifications by model.

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Silicon Darlington Transistors NTE
NTE NTE2350-like datasheet