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NTE2350 - Silicon Darlington Transistors

Download the NTE2350 datasheet PDF. This datasheet also covers the NTE2349 variant, as both devices belong to the same silicon darlington transistors family and are provided as variant models within a single manufacturer datasheet.

General Description

The NTE2349 (NPN) and NTE2350 (PNP) are silicon complementary Darlington transistors in a TO3 type package designed for use as output devices in general purpose amplifier applications.

Key Features

  • D High DC Current Gain: hFE = 1000 (Min) @ IC = 25A hFE = 400 (Min) @ IC = 50A D Diode Protection to Rated IC D Monolithic Construction w/Built.
  • In Base.
  • Emitter Shunt Resistor D Junction Temperature to +200°C Absolute Maximum Ratings: Collector.
  • Emitter Voltage, VCEO.
  • . . . 120V Collector.
  • Base Voltage, VCB.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NTE2349_NTEElectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number NTE2350
Manufacturer NTE Electronics (defunct)
File Size 26.78 KB
Description Silicon Darlington Transistors
Datasheet download datasheet NTE2350 Datasheet

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Other Datasheets by NTE Electronics (defunct)

Part Number Description
NTE235 Silicon NPN Transistor
NTE2351 Silicon Complementary Transistors
NTE2352 Silicon Complementary Transistors
NTE2353 Silicon NPN Transistor
NTE2354 Silicon NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
NTE2349 (NPN) & NTE2350 (PNP) Silicon Darlington Transistors High Current, General Purpose Description: The NTE2349 (NPN) and NTE2350 (PNP) are silicon complementary Darlington transistors in a TO3 type package designed for use as output devices in general purpose amplifier applications. Features: D High DC Current Gain: hFE = 1000 (Min) @ IC = 25A hFE = 400 (Min) @ IC = 50A D Diode Protection to Rated IC D Monolithic Construction w/Built–In Base–Emitter Shunt Resistor D Junction Temperature to +200°C Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .