NTE2351 - Silicon Complementary Transistors

Product Overview

NTE

Part number	NTE2351
Manufacturer	NTE
File Size	24.31 KB
Description	Silicon Complementary Transistors
Datasheet	NTE2351 Datasheet
Additional preview pages of the NTE2351 datasheet.

D High DC Current Gain: hFE (1) = 2000 Min @ VCE = 2V, IC = 1A D Low Saturation Voltage: VCE(sat) = 1.5V Max @ IC = 3A Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector.
Base Voltage, VCBO.
. . . . 100V Collector.
Emitter Voltage, VCEO.
. . . . 80V Emitter.
Base Voltage, VE.

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Published: May 9, 2005 |