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NTE269 - Silicon Complementary Transistors

Download the NTE269 datasheet PDF (NTE268 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for silicon complementary transistors.

Description

The NTE268 (NPN) and NTE269 (PNP) are silicon complementary Darlington transistors in a TO202 type package designed for amplifier and driver applications where high gain is an essential requirement, low power lamp and relay drivers and power drivers for high current applications such as vol

Features

  • D Low Collector.
  • Emitter Saturation Voltage: VCE(sat) = 1.5V Max @ IC = 1.5A D TO202 Type Package: 2W Free Air Dissipation @ TA = +25°C Absolute Maximum Ratings: Collector.
  • Emitter Voltage, VCEO.
  • . . . . 50V Collector.
  • Emitter Voltage, VCES.
  • . . . . 50V Emitter.
  • Base Voltage, VEBO.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NTE268_NTEElectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number NTE269
Manufacturer NTE
File Size 21.30 KB
Description Silicon Complementary Transistors
Datasheet download datasheet NTE269 Datasheet

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Full PDF Text Transcription

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NTE268 (NPN) & NTE269 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE268 (NPN) and NTE269 (PNP) are silicon complementary Darlington transistors in a TO202 type package designed for amplifier and driver applications where high gain is an essential requirement, low power lamp and relay drivers and power drivers for high–current applications such as voltage regulators. Features: D Low Collector–Emitter Saturation Voltage: VCE(sat) = 1.5V Max @ IC = 1.5A D TO202 Type Package: 2W Free Air Dissipation @ TA = +25°C Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . .
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