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NTE261 - Silicon Complementary Transistors

General Description

The NTE261 (NPN) and NTE262 (PNP) are complementary silicon Darlington power transistors in a TO220 type package designed for general purpose amplifier and low

speed switching applications.

Key Features

  • D High DC Current Gain: hFE = 2500 Typ @ IC = 4A D Collector.
  • Emitter Sustaining Voltage: VCEO(sus) = 100V Min @ 100mA D Low Collector.
  • Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 3A = 4V Max @ IC = 5A D Monolithic Construction with Built.
  • In Base.
  • Emitter Shunt Resistor Absolute Maximum Ratings: Collector.
  • Emitter Voltage, VCEO.
  • . . . 100V Collector.
  • Base.

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Datasheet Details

Part number NTE261
Manufacturer NTE Electronics (defunct)
File Size 24.86 KB
Description Silicon Complementary Transistors
Datasheet download datasheet NTE261 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NTE261 (NPN) & NTE262 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE261 (NPN) and NTE262 (PNP) are complementary silicon Darlington power transistors in a TO220 type package designed for general purpose amplifier and low–speed switching applications. Features: D High DC Current Gain: hFE = 2500 Typ @ IC = 4A D Collector–Emitter Sustaining Voltage: VCEO(sus) = 100V Min @ 100mA D Low Collector–Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 3A = 4V Max @ IC = 5A D Monolithic Construction with Built–In Base–Emitter Shunt Resistor Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector–Base Voltage, VCB . . . . . . . . . . . .