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NTE261 Datasheet Silicon Complementary Transistors

Manufacturer: NTE Electronics (defunct)

Overview: NTE261 (NPN) & NTE262 (PNP) Silicon plementary Transistors Darlington Power.

Datasheet Details

Part number NTE261
Manufacturer NTE Electronics (defunct)
File Size 24.86 KB
Description Silicon Complementary Transistors
Datasheet NTE261_NTEElectronics.pdf

General Description

: The NTE261 (NPN) and NTE262 (PNP) are plementary silicon Darlington power transistors in a TO220 type package designed for general purpose amplifier and low–speed switching applications.

Key Features

  • D High DC Current Gain: hFE = 2500 Typ @ IC = 4A D Collector.
  • Emitter Sustaining Voltage: VCEO(sus) = 100V Min @ 100mA D Low Collector.
  • Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 3A = 4V Max @ IC = 5A D Monolithic Construction with Built.
  • In Base.
  • Emitter Shunt Resistor Absolute Maximum Ratings: Collector.
  • Emitter Voltage, VCEO.
  • . . . 100V Collector.
  • Base.

NTE261 Distributor