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NTE264 - Silicon Complementary Transistors

Download the NTE264 datasheet PDF (NTE263 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for silicon complementary transistors.

Description

The NTE263 (NPN) and NTE264 (PNP) are complementary silicon Darlington power transistors in a TO220 type package designed for general purpose amplifier and low

speed switching applications.

Features

  • D High DC Current Gain: hFE = 2500 Typ (NTE263) = 3500 Typ (NTE264) D Collector.
  • Emitter Sustaining Voltage: VCEO(sus) = 100V Min D Low Collector.
  • Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 5A D Monolithic Construction with Built.
  • In Base.
  • Emitter Shunt Resistor Absolute Maximum Ratings: Collector.
  • Emitter Voltage, VCEO.
  • . . . 100V Collector.
  • Base Voltage,.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NTE263_NTEElectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number NTE264
Manufacturer NTE Electronics (defunct)
File Size 24.89 KB
Description Silicon Complementary Transistors
Datasheet download datasheet NTE264 Datasheet

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Full PDF Text Transcription

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NTE263 (NPN) & NTE264 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE263 (NPN) and NTE264 (PNP) are complementary silicon Darlington power transistors in a TO220 type package designed for general purpose amplifier and low–speed switching applications. Features: D High DC Current Gain: hFE = 2500 Typ (NTE263) = 3500 Typ (NTE264) D Collector–Emitter Sustaining Voltage: VCEO(sus) = 100V Min D Low Collector–Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 5A D Monolithic Construction with Built–In Base–Emitter Shunt Resistor Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector–Base Voltage, VCB . . . . . . . . . . . . . . . .
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