The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
www.DataSheet4U.com
NTE2662 Silicon NPN Transistor High Frequency, Low Noise RF
Description: The NTE2662 is a silicon NPN type transistor in a miniature surface mount package designed for oscillator applications up to 3GHz. This device features low voltage operation, low phase noise, and high immunity to pushing effects. Features: D New Miniature Surface Mount Package − Small Transistor Footprint − 1.0mm x 0.5mm x 0.5mm − Low Profile / 0.50mm Package Height − Flat Lead Style for Better RF Performance D Ideal for ≤ 3GHz Oscillators D Low Phase Noise D Low Pushing Factor Absolute Maximum Ratings: (TA = +25°C, Note 1 unless otherwise specified) Collector−to−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .