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NTE2666 - (NTE2666 / NTE2667) Silicon Complementary Transistors

Key Features

  • D DC Current Gain Specified to 5 Amperes D Collector-Emitter Sustaining Voltage D High Current Gain - Bandwidth Product Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector-Emitter Voltage, VCEO.
  • . . . 250V Collector-Base Voltage, VCB.
  • 250V Emitter-Base Voltage, VEB.

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Datasheet Details

Part number NTE2666
Manufacturer NTE Electronics (defunct)
File Size 82.93 KB
Description (NTE2666 / NTE2667) Silicon Complementary Transistors
Datasheet download datasheet NTE2666 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com NTE2666 (NPN) & NTE2667 (PNP) Silicon Complementary Transistors High Frequency Driver Features: D DC Current Gain Specified to 5 Amperes D Collector-Emitter Sustaining Voltage D High Current Gain - Bandwidth Product Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250V Collector-Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250V Emitter-Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . .