Datasheet4U Logo Datasheet4U.com

NTE2667 - (NTE2666 / NTE2667) Silicon Complementary Transistors

Download the NTE2667 datasheet PDF. This datasheet also covers the NTE2666 variant, as both devices belong to the same (nte2666 / nte2667) silicon complementary transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • D DC Current Gain Specified to 5 Amperes D Collector-Emitter Sustaining Voltage D High Current Gain - Bandwidth Product Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector-Emitter Voltage, VCEO.
  • . . . 250V Collector-Base Voltage, VCB.
  • 250V Emitter-Base Voltage, VEB.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NTE2666_NTE.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number NTE2667
Manufacturer NTE Electronics (defunct)
File Size 82.93 KB
Description (NTE2666 / NTE2667) Silicon Complementary Transistors
Datasheet download datasheet NTE2667 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com NTE2666 (NPN) & NTE2667 (PNP) Silicon Complementary Transistors High Frequency Driver Features: D DC Current Gain Specified to 5 Amperes D Collector-Emitter Sustaining Voltage D High Current Gain - Bandwidth Product Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250V Collector-Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250V Emitter-Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . .