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NTE266 - Silicon NPN Transistor Darlington Power Amplifier

Key Features

  • D Forward Current Transfer Ratio: hFE = 40,000 Min D Power Dissipation: 1.33W Free.
  • Air @ TA = +50°C D Hard Solder Mountdown.

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Datasheet Details

Part number NTE266
Manufacturer NTE Electronics (defunct)
File Size 22.86 KB
Description Silicon NPN Transistor Darlington Power Amplifier
Datasheet download datasheet NTE266 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NTE266 Silicon NPN Transistor Darlington Power Amplifier Features: D Forward Current Transfer Ratio: hFE = 40,000 Min D Power Dissipation: 1.33W Free–Air @ TA = +50°C D Hard Solder Mountdown Applications: D Driver, IC Driver D Regulator D Touch Switch D Audio Output D Relay Substitute D Oscillator D Servo–Amplifier D Capacitor Multiplier Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–to–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Collector–to–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Emitter–to–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .