NTE268 Overview
Description
The NTE268 (NPN) and NTE269 (PNP) are silicon complementary Darlington transistors in a TO202 type package designed for amplifier and driver applications where high gain is an essential requirement, low power lamp and relay drivers and power drivers for high–current applications such as voltage regulators. Features: D Low Collector–Emitter Saturation Voltage: VCE(sat) = 1.5V Max @ IC = 1.5A D TO202 Type Package: 2W Free Air Dissipation @ TA = +25°C.
Key Features
- D Low Collector–Emitter Saturation Voltage: VCE(sat) = 1.5V Max @ IC = 1.5A D TO202 Type Package: 2W Free Air Dissipation @ TA = +25°C
- 3A Continuous Base Current, IB
- 100mA Total Power Dissipation (TA = +25°C), PD
- 1.67W Derate Above 25°C (Note
- 13.3mW/°C Total Power Dissipation (TC = +25°C), PD
- 10W Derate Above 25°C
