NTE271 transistors equivalent, silicon complementary transistors.
D High DC Current Gain: hFE = 1000 Min @ IC = 5A, VCE = 4V D Collector
–Emitter Sustaining Voltage: VCEO(sus) = 100V Min @ 30mA D Monolithic Construction .
Features: D High DC Current Gain: hFE = 1000 Min @ IC = 5A, VCE = 4V D Collector
–Emitter Sustaining Vo.
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