NTE312 transistor equivalent, n-channel silicon junction field effect transistor.
D High Power Gain: 10dB Min at 400MHz D High Transconductance: 4000 µmho Min at 400MHz D Low Crss: 1pF Max D High (Yfs) / Ciss Ratio (High
–Frequency Figu.
The NTE312 comes in a TO
–92 package. Features: D High Power Gain: 10dB Min at 400MHz D High Transconduc.
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