NTE3120
NTE3120 is Silicon NPN Phototransistor Detector manufactured by NTE Electronics.
Features
: D High Sensitivity D Ga As LED- Wide Spectral Range, with Ga As LED. D Low Dark Current D Side- View Plastic Package Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector- Emitter Voltage, VCEO
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- - . . . . 20V Emitter- Collector Voltage, VECO
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- 5V Collector Current, IC
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- - . . 20m A Collector Dissipation PC
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- . . . 100m W Operating Temperature Range, Topr
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- 25° to +85°C Storage Temperature Range, Tstg
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- 30° to +100°C Electro- Optical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Dark Current Photo Current Peak Sensitivity Wavelength Acceptance Half Angle Rise Time Fall Time Collector- Emitter Saturation Voltage Symbol ICEO ICE(L) λP q tr tf Test Conditions VCE = 10V VCE = 10V, L = 500 1x, Note 1 VCE = 10V Note 2 VCC = 10V, ICE(L) = 5m A, RL = 100Ω Min Typ Max Unit
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- 0.01 1.0 3 800 35 4 4...