• Part: NTE3120
  • Description: Silicon NPN Phototransistor Detector
  • Category: Transistor
  • Manufacturer: NTE Electronics
  • Size: 19.74 KB
Download NTE3120 Datasheet PDF
NTE Electronics
NTE3120
NTE3120 is Silicon NPN Phototransistor Detector manufactured by NTE Electronics.
Features : D High Sensitivity D Ga As LED- Wide Spectral Range, with Ga As LED. D Low Dark Current D Side- View Plastic Package Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector- Emitter Voltage, VCEO - - - - - - - - - - . . . . 20V Emitter- Collector Voltage, VECO - - - - - - - - - - - 5V Collector Current, IC - - - - - - - - - - - - . . 20m A Collector Dissipation PC - - - - - - - - - - - . . . 100m W Operating Temperature Range, Topr - - - - - - - - . - 25° to +85°C Storage Temperature Range, Tstg - - - - - - - - . . - 30° to +100°C Electro- Optical Characteristics: (TA = +25°C unless otherwise specified) Parameter Dark Current Photo Current Peak Sensitivity Wavelength Acceptance Half Angle Rise Time Fall Time Collector- Emitter Saturation Voltage Symbol ICEO ICE(L) λP q tr tf Test Conditions VCE = 10V VCE = 10V, L = 500 1x, Note 1 VCE = 10V Note 2 VCC = 10V, ICE(L) = 5m A, RL = 100Ω Min Typ Max Unit - 1 - - - - - 0.01 1.0 3 800 35 4 4...