NTE312 Datasheet | NTE Electronics

Description : The NTE312 is a field effect transistor designed for VHF amplifier and mixer applications. The NTE312 es in a TO- 92 package. Features : D High Power Gain: 10d B Min at 400MHz D High Transconductance: 4000 µmho Min at 400MHz D Low Crss: 1p F Max D High (Yfs) / Ciss Ratio (High- Frequency Figure- of- Merit) D Drain and Gate Leads Separated for High Maximum Stable Gain D Cross- Modulation Minimized by Square- Law Transfer Characteristic D For Use in VHF Amplifiers in FM, TV, and Mobile munications Equipment Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Drain- Gate Voltage, VDG - - - - - - - - - - - - 30V Gate- Source Voltage, VGS - - - - - - - - - - - . . - 30V Gate Current, IG - - - - - - - - - - - - - . 50m A Total Device Dissipation (TA = +25°C ), PD - - - - - - - - . 360m W Derate Above +25°C - - - - - - - - - - . 2.88m W/°C Total Device Dissipation (TC = +25°C), PD - - - - - - - - . 500m W Derate Above +25°C - - - - - - -...