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NTE312 - N-Channel Silicon Junction Field Effect Transistor

Description

The NTE312 is a field effect transistor designed for VHF amplifier and mixer applications.

92 package.

Features

  • D High Power Gain: 10dB Min at 400MHz D High Transconductance: 4000 µmho Min at 400MHz D Low Crss: 1pF Max D High (Yfs) / Ciss Ratio (High.
  • Frequency Figure.
  • of.
  • Merit) D Drain and Gate Leads Separated for High Maximum Stable Gain D Cross.
  • Modulation Minimized by Square.
  • Law Transfer Characteristic D For Use in VHF Amplifiers in FM, TV, and Mobile Communications Equipment Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Drain.
  • Gate Volt.

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Datasheet Details

Part number NTE312
Manufacturer NTE Electronics (defunct)
File Size 24.41 KB
Description N-Channel Silicon Junction Field Effect Transistor
Datasheet download datasheet NTE312 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NTE312 N–Channel Silicon Junction Field Effect Transistor Description: The NTE312 is a field effect transistor designed for VHF amplifier and mixer applications. The NTE312 comes in a TO–92 package. Features: D High Power Gain: 10dB Min at 400MHz D High Transconductance: 4000 µmho Min at 400MHz D Low Crss: 1pF Max D High (Yfs) / Ciss Ratio (High–Frequency Figure–of–Merit) D Drain and Gate Leads Separated for High Maximum Stable Gain D Cross–Modulation Minimized by Square–Law Transfer Characteristic D For Use in VHF Amplifiers in FM, TV, and Mobile Communications Equipment Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Drain–Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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