Datasheet4U Logo Datasheet4U.com

NTE312 Datasheet N-channel Silicon Junction Field Effect Transistor

Manufacturer: NTE Electronics (defunct)

Overview: NTE312 N–Channel Silicon Junction Field Effect Transistor.

Datasheet Details

Part number NTE312
Manufacturer NTE Electronics (defunct)
File Size 24.41 KB
Description N-Channel Silicon Junction Field Effect Transistor
Datasheet NTE312_NTEElectronics.pdf

General Description

: The NTE312 is a field effect transistor designed for VHF amplifier and mixer applications.

The NTE312 es in a TO–92 package.

Key Features

  • D High Power Gain: 10dB Min at 400MHz D High Transconductance: 4000 µmho Min at 400MHz D Low Crss: 1pF Max D High (Yfs) / Ciss Ratio (High.
  • Frequency Figure.
  • of.
  • Merit) D Drain and Gate Leads Separated for High Maximum Stable Gain D Cross.
  • Modulation Minimized by Square.
  • Law Transfer Characteristic D For Use in VHF Amplifiers in FM, TV, and Mobile Communications Equipment Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Drain.
  • Gate Volt.

More Datasheets from NTE Electronics (defunct)

Part Number Description
NTE3120 Silicon NPN Phototransistor Detector
NTE3122 Phototransistor
NTE3123 Phototransistor
NTE31 Silicon Complementary Transistors
NTE310 Integrated Thyristor/Rectifier
NTE3100 Photon Coupled Interrupter Module
NTE3101 Photon Coupled Interrupter Module
NTE3102 Photon Coupled Interrupter Module
NTE3103 Photon Coupled Interrupter Module
NTE3104 Opto Interrupter Module Photo Reflector

NTE312 Distributor