: The NTE355 is designed for 12.5 Volt VHF large–signal amplifier applications required in military and industrial equipment operating to 250MHz.
Overview
NTE355 Silicon NPN Transistor RF Power Output PO = 30W @ 175MHz.
Key Features
D Balanced Emitter Construction with Isothermal Resistor Design to Provide the Designer with the Optimum in Transistor Ruggedness. D Low lead Inductance Stripline Packaging for Easier Design and Increased Broadband Capabilities D Flange Package for Easy Mounting and Better Thermal Conductivity to Heat Sink. D Exceptional Power Output Stability versus Temperature. Absolute Maximum Ratings: Collector.
