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TIP122 - Silicon NPN Transistor

General Description

The TIP122 is a silicon NPN Darlington transistor in a TO 220 type package designed for general purpose amplifier and low

speed switching applications.

Key Features

  • D High DC Current Gain: hFE = 2500 (Typ) at IC = 4A D Collector.
  • Emitter Sustaining Voltage: VCEO(sus) = 100V (Min) at IC = 100mA D Low Collector.
  • Emitter Saturation Voltage: Low Collector.
  • Emitter Saturation Voltage: VVCCEE((ssaatt)) = = 2.0V 4.0V (Max) (Max) at at IICC = = 3A 5A Absolute Maximum Ratings: (Note 1) Collector.
  • Emitter Voltage, VCEO.
  • . . . 100V Colle.

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Datasheet Details

Part number TIP122
Manufacturer NTE Electronics (defunct)
File Size 55.68 KB
Description Silicon NPN Transistor
Datasheet download datasheet TIP122 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TIP122 Silicon NPN Transistor Darlington Power Amp, Switch TO−220 Type Package Description: The TIP122 is a silicon NPN Darlington transistor in a TO−220 type package designed for general purpose amplifier and low−speed switching applications. Features: D High DC Current Gain: hFE = 2500 (Typ) at IC = 4A D Collector−Emitter Sustaining Voltage: VCEO(sus) = 100V (Min) at IC = 100mA D Low Collector−Emitter Saturation Voltage: Low Collector−Emitter Saturation Voltage: VVCCEE((ssaatt)) = = 2.0V 4.0V (Max) (Max) at at IICC = = 3A 5A Absolute Maximum Ratings: (Note 1) Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . .