NTE573 rectifier equivalent, schottky barrier rectifier.
epitaxial construction with oxide passivation and metal overlap contact. This device is ideally suited for use in low
–voltage, high
–freque.
The NTE573 is an axial lead metal
–to
–silicon power diode using the Schottky Barrier principle. State
– of
–the
–art geometry features epitaxial construction with oxide pass.
Image gallery
Download