74AHC3GU04 Key Features
- Unit ns pF pF
- CPD is used to determine the dynamic power dissipation (PD in µW). PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where: f
- 40 °C to +125 °C
- 5 March 2004
- 5 March 2004
- Part: 74AHC3GU04
- Description: high-speed Si-gate CMOS device
- Manufacturer: NXP Semiconductors
- Size: 97.34 KB
Other 74AHC3GU04 Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Nexperia |
74AHC3GU04 | Triple unbuffered inverter |
|
Nexperia |
74AHC3GU04-Q100 | Triple unbuffered inverter |
|
Nexperia |
74AHC3GU04DC | Triple unbuffered inverter |
|
Nexperia |
74AHC3GU04DP | Triple unbuffered inverter |