• Part: 74AHC3GU04
  • Description: high-speed Si-gate CMOS device
  • Manufacturer: NXP Semiconductors
  • Size: 97.34 KB
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NXP Semiconductors
74AHC3GU04
74AHC3GU04 is high-speed Si-gate CMOS device manufactured by NXP Semiconductors.
description The 74AHC3GU04 is a high-speed Si-gate CMOS device. This device provides the inverting single stage function. 2. Features s Symmetrical output impedance s High noise immunity s ESD protection: x HBM EIA/JESD22-A114-A exceeds 2000 V x MM EIA/JESD22-A115-A exceeds 200 V x CDM EIA/JESD22-C101 exceeds 1000 V. s Low power dissipation s Balanced propagation delays s SOT505-2 and SOT765-1 package s Output capability ±8 m A drive s Specified from - 40 °C to +85 °C and from - 40 °C to +125 °C. 3. Quick reference data Table 1: Quick reference data GND = 0 V; Tamb = 25 °C; tr = tf ≤ 3.0 ns. Symbol t PHL, t PLH CI CPD [1] Parameter Conditions Min [1] [2] Typ 2.5 3.0 4 Max 5.5 10 - Unit ns p F p F propagation delay n A to n Y VCC = 5 V; CL = 15 p F input capacitance power dissipation capacitance - CPD is used to determine the dynamic power dissipation (PD in µW). PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in p F; VCC = supply voltage in Volts; N = total load switching outputs; Σ(CL × VCC2 × fo) = sum of the outputs. The condition is VI = GND to VCC. [2] Philips Semiconductors Inverter 4. Ordering information Table 2: Ordering information Package Temperature range 74AHC3GU04DP - 40 °C to +125 °C Name TSSOP8 Description plastic thin shrink small outline package; 8 leads; body width 3 mm; lead length 0.5 mm Version SOT505-2 Type number 74AHC3GU04DC - 40 °C to +125 °C VSSOP8 plastic shrink small outline package; 8 SOT765-1 leads; body width 2.3 mm 5. Marking Table 3: Marking Marking code AU04 AU4 Type number 74AHC3GU04DP 74AHC3GU04DC 6. Functional diagram 1A 1Y 7 3 1 5 2A 2Y 5...