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74AHC3GU04 - high-speed Si-gate CMOS device

Description

The 74AHC3GU04 is a high-speed Si-gate CMOS device.

This device provides the inverting single stage function.

2.

Features

  • s Symmetrical output impedance s High noise immunity s ESD protection: x HBM EIA/JESD22-A114-A exceeds 2000 V x MM EIA/JESD22-A115-A exceeds 200 V x CDM EIA/JESD22-C101 exceeds 1000 V. s Low power dissipation s Balanced propagation delays s SOT505-2 and SOT765-1 package s Output capability ±8 mA drive s Specified from.
  • 40 °C to +85 °C and from.
  • 40 °C to +125 °C. 3. Quick reference data Table 1: Quick reference data GND = 0 V; Tamb = 25 °C; tr = tf ≤ 3.0 ns. Symbol tPHL, tPLH CI C.

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Datasheet Details

Part number 74AHC3GU04
Manufacturer NXP
File Size 97.34 KB
Description high-speed Si-gate CMOS device
Datasheet download datasheet 74AHC3GU04 Datasheet
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74AHC3GU04 Inverter Rev. 01 — 5 March 2004 Product data sheet 1. General description The 74AHC3GU04 is a high-speed Si-gate CMOS device. This device provides the inverting single stage function. 2. Features s Symmetrical output impedance s High noise immunity s ESD protection: x HBM EIA/JESD22-A114-A exceeds 2000 V x MM EIA/JESD22-A115-A exceeds 200 V x CDM EIA/JESD22-C101 exceeds 1000 V. s Low power dissipation s Balanced propagation delays s SOT505-2 and SOT765-1 package s Output capability ±8 mA drive s Specified from −40 °C to +85 °C and from −40 °C to +125 °C. 3. Quick reference data Table 1: Quick reference data GND = 0 V; Tamb = 25 °C; tr = tf ≤ 3.0 ns. Symbol tPHL, tPLH CI CPD [1] Parameter Conditions Min [1] [2] Typ 2.5 3.0 4 Max 5.
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