Si-gate Datasheet | Specifications & PDF Download

Micrel, Inc. QUINT EXCLUSIVE OR/NOR GATE SY100S307 SY100S307 FEATURES DESCRIPTION ■ Max. propagation delay of 1000ps ■ IEE min. of –58mA ■ Ext

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TPM27224 Dual 2-A High-Speed, Low-Side Gate Driver Features Description • Industry-Standard Pin-out • 4.5-V to 23-V Single-Supply Range • Dual Inde

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TPM44273 Single-Channel 5-A High-Speed, Low-Side Gate Driver Features Description • Industry-Standard Pin-Out • 4.5-V to 23-V Single-Supply Range •

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NSI6602 High Reliability Isolated Dual-Channel Gate Driver Datasheet (EN) 1.8 Product Overview NSI6602 is a family of high reliability isolated dualc

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Product Folder Order Now Technical Documents Tools & Software Support & Community SN5400, SN54LS00, SN54S00 SN7400, SN74LS00, SN74S00 SDLS025D –

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NSI6801 Single-Channel Isolated Gate Driver Datasheet (EN) 1.4 Product Overview The NSI6801 is a single-channel isolated gate driver which is pin-com

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1A60 Sensitive Gate Triacs HAOPIN MICROELECTRONICS CO.,LTD. Description Passivated, sensitive gate triacs in a plastic envelope, intended for use in

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DM7486 Quad 2-Input Exclusive-OR Gate September 1986 Revised February 2000 DM7486 Quad 2-Input Exclusive-OR Gate General Description This device con

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GT45F123 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT45F123 For PDP-TV Applications • • • • • 5th generation (trench gate stru

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Product Folder Order Now Technical Documents Tools & Software Support & Community SN5400, SN54LS00, SN54S00 SN7400, SN74LS00, SN74S00 SDLS025D –

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ID7S625 Chipown High Voltage High Side & Low Side Gate Drive IC General description The ID7S625 is a high voltage, high speed power MOSFET and IGBT

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TM BT131-8D HPM Sensitive Gate Triacs HAOPIN MICROELECTRONICS CO.,LTD. Description Passivated, sensitive gate triacs in a plastic envelope, intend

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SLM27523, SLM27524, SLM27525 Dual-Channel, High-Speed, Low-Side Gate Driver GENERAL DESCRIPTION FEATURES The SLM2752x family of devices are dual-c

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www.DataSheet4U.com PD - 94381E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C IRGB6B60KD IRGS6B60KD IRGSL6B60KD VCES = 600

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ELECTRONIC GIANT EG2113D Datasheet High-power MOS transistor, IGBT transistor gate driver chip 2019 © Yijing Microelectronics Co., Ltd. All rights re

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ID2006 Chipown High-Side & Low-Side Gate Drive IC General description The ID2006 is a high voltage, high speed power MOSFET driver with independent

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BT40T60 ANFD ○R BT40T60 ANFD FS IGBT ， ，。 RoHS 。 ● FS ，； ● ：VCE(sat),TYP=1.8V @IC=40A,VGE=15V ； VCES IC Ptot （TC=25℃） VCE(sat) 600 40 280

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PACKAGE OPTION ADDENDUM www.ti.com 15-Apr-2017 PACKAGING INFORMATION Orderable Device SN5401J SN54LS01J SN54LS01J SNJ5401J SNJ5401J SNJ5401W SNJ54

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