Datasheet Details
| Part number | A2I09VD015NR1 |
|---|---|
| Manufacturer | NXP Semiconductors |
| File Size | 541.45 KB |
| Description | Power Amplifiers |
| Datasheet | A2I09VD015NR1-NXP.pdf |
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Overview: NXP Semiconductors Technical Data Document Number: A2I09VD015N Rev. 0, 06/2018 RF LDMOS Wideband Integrated Power Amplifiers The A2I09VD015N wideband integrated circuit is designed with on--chip matching that makes it usable from 575 to 960 MHz. This multi -- stage structure is rated for 48 to 55 V operation and covers all typical cellular base station modulation formats. 900 MHz Typical Single--Carrier W--CDMA Characterization Performance: VDD = 48 Vdc, IDQ1(A+B) = 16 mA, IDQ2(A+B) = 84 mA, Pout = 2 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(1) Frequency Gps (dB) PAE (%) ACPR (dBc) 920 MHz 940 MHz 960 MHz 32.9 19.3 –45.9 33.0 19.7 –45.5 32.8 19.6 –44.
| Part number | A2I09VD015NR1 |
|---|---|
| Manufacturer | NXP Semiconductors |
| File Size | 541.45 KB |
| Description | Power Amplifiers |
| Datasheet | A2I09VD015NR1-NXP.pdf |
|
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| Part Number | Description |
|---|---|
| A2I09VD015GNR1 | Power Amplifiers |
| A2I09VD030GN | Power Amplifiers |
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