* High terminal impedances for optimal broadband performance
* Advanced high performance in
* package Doherty
* Improved linearized error vector magnitude with next generation signal
* Able to withstand extremely high output VSWR and broadband operating conditions A3G26H502W17
A3G26H502W17S Datasheet (341.12 KB)
A3G26H502W17S
341.12 KB
Rf power gan transistor.
NXP Semiconductors Technical Data Document Number: A3G26H502W17S Rev. 1, 01/2021 RF Power GaN Transistor This 80 W asymmetrical Doherty RF power Ga.
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