Overview: NXP Semiconductors Technical Data Document Number: A3G26H502W17S Rev. 1, 01/2021 RF Power GaN Transistor This 80 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2496 to 2690 MHz.
This part is characterized and performance is guaranteed for applications operating in the 2496 to 2690 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies. 2600 MHz Typical Doherty Single--Carrier W--CDMA Characterization Performance: VDD = Signal 48 Vdc, IDQA = 370 mA, PAR = 9.9 dB @ 0.01% PVrGoSbBab=il–ity4.o6nVCdCc,DPFo.u(1t )= 80 W Avg., Input Frequency Gps (dB) D Output PAR ACPR (%) (dB) (dBc) 2496 MHz 2590 MHz 2690 MHz 14.4 48.4 15.0 49.3 14.8 51.2 7.8 –32.6 8.2 –35.2 7.8 –34.0 1. All data measured in fixture with device soldered to heatsink.
