* Advanced high performance in
* package Doherty
* Designed for wide instantaneous bandwidth applications
* Greater negative gate
* source voltage range for improved Class C operation
* Able to withstand extremely high output VSWR and broadband operating conditions
A3T21H456W23SR6 Datasheet (666.05 KB)
A3T21H456W23SR6
666.05 KB
N-channel mosfet.
NXP Semiconductors Technical Data Document Number: A3T21H456W23S Rev. 1, 08/2018 RF Power LDMOS Transistor N Channel Enhancement Mod.
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