Datasheet Summary
NXP Semiconductors Technical Data
Document Number: A3T21H456W23S Rev. 1, 08/2018
RF Power LDMOS Transistor
N--Channel Enhancement--Mode Lateral MOSFET
This 87 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2110 to 2200 MHz.
2100 MHz
- Typical Doherty Single--Carrier W--CDMA Performance: VDD = 30 Vdc, IDQA = 800 mA, VGSB = 0.35 Vdc, Pout = 87 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency
Gps (dB)
D
Output PAR
ACPR
(%)
(dB)
(dBc)
2110 MHz
- 30.3
2140 MHz
- 31.1
2170...