AFIC10275GN Datasheet RF LDMOS Wideband Integrated Power Amplifiers

Manufacturer: NXP Semiconductors

Download the AFIC10275GN datasheet PDF. This datasheet also includes the AFIC10275N variant, as both parts are published together in a single manufacturer document.

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AFIC10275GN rf ldmos wideband integrated power amplifiers by NXP Semiconductors - Datasheet Preview — Note: The manufacturer provides a single datasheet file (AFIC10275N-NXP.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	AFIC10275GN
Manufacturer	NXP Semiconductors
File Size	0.99 MB
Description	RF LDMOS Wideband Integrated Power Amplifiers
Datasheet	AFIC10275GN Datasheet

Overview

Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The avionics AFIC10275N is a 2--stage RFIC designed for transponder applications operating from 978 to 1090 MHz.

These devices are suitable for use in pulse applications, including Mode S transponders used for ADS--B.

Narrowband Performance: (50 Vdc, TA = 25C) Frequency (MHz) Signal Type Pout (W) 1090 (1) Pulse 250 Peak (128 sec, 10% Duty Cycle) Gps (dB) 32.1 2nd Stage Eff.

Key Features

Characterized from 978 to 1090 MHz.
On--Chip Input (50 Ohm) and Interstage Matching.
Single Ended.
Integrated ESD Protection.
Low Thermal Resistance.
Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (3) Typical.

More Datasheets from NXP Semiconductors

Part Number	Description
AFIC10275N	RF LDMOS Wideband Integrated Power Amplifiers