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AFIC10275N - RF LDMOS Wideband Integrated Power Amplifiers

Features

  • Characterized from 978 to 1090 MHz.
  • On--Chip Input (50 Ohm) and Interstage Matching.
  • Single Ended.
  • Integrated ESD Protection.
  • Low Thermal Resistance.
  • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (3) Typical.

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Datasheet Details

Part number AFIC10275N
Manufacturer NXP
File Size 0.99 MB
Description RF LDMOS Wideband Integrated Power Amplifiers
Datasheet download datasheet AFIC10275N Datasheet
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Full PDF Text Transcription

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Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The avionics AFIC10275N is a 2--stage RFIC designed for transponder applications operating from 978 to 1090 MHz. These devices are suitable for use in pulse applications, including Mode S transponders used for ADS--B. Narrowband Performance: (50 Vdc, TA = 25C) Frequency (MHz) Signal Type Pout (W) 1090 (1) Pulse 250 Peak (128 sec, 10% Duty Cycle) Gps (dB) 32.1 2nd Stage Eff. (%) 61.4 Typical Wideband Performance (50 Vdc, TA = 25C) Frequency (MHz)(2) Signal Type Pout (W) Gps (dB) 978 Pulse 250 Peak 32.6 1030 (128 sec, 10% Duty Cycle) 32.5 1090 30.1 2nd Stage Eff. (%) 61.0 59.1 60.
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