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AFIC10275GN - RF LDMOS Wideband Integrated Power Amplifiers

This page provides the datasheet information for the AFIC10275GN, a member of the AFIC10275N RF LDMOS Wideband Integrated Power Amplifiers family.

Features

  • Characterized from 978 to 1090 MHz.
  • On--Chip Input (50 Ohm) and Interstage Matching.
  • Single Ended.
  • Integrated ESD Protection.
  • Low Thermal Resistance.
  • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (3) Typical.

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Datasheet preview – AFIC10275GN

Datasheet Details

Part number AFIC10275GN
Manufacturer NXP
File Size 0.99 MB
Description RF LDMOS Wideband Integrated Power Amplifiers
Datasheet download datasheet AFIC10275GN Datasheet
Additional preview pages of the AFIC10275GN datasheet.
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Full PDF Text Transcription

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Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The avionics AFIC10275N is a 2--stage RFIC designed for transponder applications operating from 978 to 1090 MHz. These devices are suitable for use in pulse applications, including Mode S transponders used for ADS--B. Narrowband Performance: (50 Vdc, TA = 25C) Frequency (MHz) Signal Type Pout (W) 1090 (1) Pulse 250 Peak (128 sec, 10% Duty Cycle) Gps (dB) 32.1 2nd Stage Eff. (%) 61.4 Typical Wideband Performance (50 Vdc, TA = 25C) Frequency (MHz)(2) Signal Type Pout (W) Gps (dB) 978 Pulse 250 Peak 32.6 1030 (128 sec, 10% Duty Cycle) 32.5 1090 30.1 2nd Stage Eff. (%) 61.0 59.1 60.
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