AFIC10275N Datasheet RF LDMOS Wideband Integrated Power Amplifiers

Manufacturer: NXP Semiconductors

AFIC10275N rf ldmos wideband integrated power amplifiers by NXP Semiconductors - Datasheet Preview

Datasheet Details

Part number	AFIC10275N
Manufacturer	NXP Semiconductors
File Size	0.99 MB
Description	RF LDMOS Wideband Integrated Power Amplifiers
Datasheet	AFIC10275N Datasheet

Overview

Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The avionics AFIC10275N is a 2--stage RFIC designed for transponder applications operating from 978 to 1090 MHz.

These devices are suitable for use in pulse applications, including Mode S transponders used for ADS--B.

Narrowband Performance: (50 Vdc, TA = 25C) Frequency (MHz) Signal Type Pout (W) 1090 (1) Pulse 250 Peak (128 sec, 10% Duty Cycle) Gps (dB) 32.1 2nd Stage Eff.

Key Features

Characterized from 978 to 1090 MHz.
On--Chip Input (50 Ohm) and Interstage Matching.
Single Ended.
Integrated ESD Protection.
Low Thermal Resistance.
Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (3) Typical.

More Datasheets from NXP Semiconductors

Part Number	Description
AFIC10275GN	RF LDMOS Wideband Integrated Power Amplifiers