AFM906N Datasheet | NXP Semiconductors

Features - Characterized for operation from 136 to 941 MHz - Unmatched input and output allowing wide frequency range utilization - Integrated ESD protection - Integrated stability enhancements - Wideband - full power across the band - Exceptional thermal performance - Extreme ruggedness - High linearity for: TETRA, SSB Typical Applications - Output stage VHF band handheld radio - Output stage UHF band handheld radio - Output stage for 700- 800 MHz handheld radio - Generic 6 W driver for ISM and broadcast final stage transistors Document Number: AFM906N Rev. 2, 11/2018 136- 941 MHz, 6.0 W, 7.5 V WIDEBAND AIRFAST RF POWER LDMOS TRANSISTOR DFN 4  6 N.C. 1 N.C. 2 16 N.C. 15 N.C. Gate 3 14 Drain Gate 4 13 Drain Gate 5 12 Drain Gate 6 11 Drain N.C. 7 N.C. 8 10 N.C. 9 N.C. (Top View) Note: Exposed backside of the package is the source terminal for the transistor. Figure 1. Pin Connections  2016, 2018 NXP B.V. RF Device Data NXP Semiconductors AFM906N 1 Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Range Operating Junction Temperature Range (1,2) Total Device Dissipation @ TC = 25C Derate above...