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NXP Semiconductors Electronic Components Datasheet

AFM906N Datasheet

RF Power LDMOS Transistor

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NXP Semiconductors
Technical Data
RF Power LDMOS Transistor
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFET
Designed for handheld two--way radio applications with frequencies from
136 to 941 MHz. The high gain, ruggedness and wideband performance of this
device make it ideal for large--signal, common--source amplifier applications in
handheld radio equipment.
Wideband Performance (In 440–520 MHz reference circuit, 7.5 Vdc, TA = 25C, CW)
Frequency
Pin
Gps
D
Pout
(MHz)
(W)
(dB)
(%)
(W)
440–520 (1,2)
0.16
16.2
62.0
6.5
Narrowband Performance (7.5 Vdc, TA = 25C, CW)
Frequency
(MHz)
Gps
D
Pout
(B)
(%)
(W)
520 (3)
20.3
70.8
6.8
Load Mismatch/Ruggedness
Frequency Signal
(MHz)
Type
VSWR
Pin
(dBm)
Test
Voltage
Result
520 (3)
CW > 65:1 at all
21
Phase Angles (3 dB Overdrive)
10.8 No Device
Degradation
1. Measured in 440–520 MHz broadband reference circuit (page 6).
2. The values shown are the minimum measured performance numbers across the
indicated frequency range.
3. Measured in 520 MHz narrowband production test fixture (page 9).
Features
Characterized for operation from 136 to 941 MHz
Unmatched input and output allowing wide frequency range utilization
Integrated ESD protection
Integrated stability enhancements
Wideband — full power across the band
Exceptional thermal performance
Extreme ruggedness
High linearity for: TETRA, SSB
Typical Applications
Output stage VHF band handheld radio
Output stage UHF band handheld radio
Output stage for 700–800 MHz handheld radio
Generic 6 W driver for ISM and broadcast final stage transistors
Document Number: AFM906N
Rev. 2, 11/2018
AFM906N
136–941 MHz, 6.0 W, 7.5 V
WIDEBAND
AIRFAST RF POWER LDMOS
TRANSISTOR
DFN 4 6
N.C. 1
N.C. 2
16 N.C.
15 N.C.
Gate 3
14 Drain
Gate 4
13 Drain
Gate 5
12 Drain
Gate 6
11 Drain
N.C. 7
N.C. 8
10 N.C.
9 N.C.
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistor.
Figure 1. Pin Connections
2016, 2018 NXP B.V.
RF Device Data
NXP Semiconductors
AFM906N
1


NXP Semiconductors Electronic Components Datasheet

AFM906N Datasheet

RF Power LDMOS Transistor

No Preview Available !

Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature Range
Operating Junction Temperature Range (1,2)
Total Device Dissipation @ TC = 25C
Derate above 25C
Symbol
VDSS
VGS
VDD
Tstg
TC
TJ
PD
Value
--0.5, +30
--6.0, +12
0 to 12.5
--65 to +150
--40 to +150
--40 to +150
65.8
0.53
Unit
Vdc
Vdc
Vdc
C
C
C
W
W/C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 78C, 6 W CW, 7.5 Vdc, IDQ = 100 mA, 520 MHz
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Symbol
RJC
Value (2,3)
1.9
Unit
C/W
Class
1C, passes 1000 V
A, passes 50 V
IV, passes 2000 V
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
Package Peak Temperature
Unit
3
260
C
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 30 Vdc, VGS = 0 Vdc)
IDSS
2
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 7.5 Vdc, VGS = 0 Vdc)
IDSS
1
Adc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
500
nAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 78 Adc)
VGS(th)
1.8
2.15
2.6
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 0.78 Adc)
VDS(on)
0.11
Vdc
Forward Transconductance
(VDS = 7.5 Vdc, ID = 4.7 Adc)
gfs
4.4
S
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.nxp.com/RF/calculators.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.
(continued)
AFM906N
2
RF Device Data
NXP Semiconductors


Part Number AFM906N
Description RF Power LDMOS Transistor
Maker NXP
Total Page 3 Pages
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