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NXP Semiconductors Technical Data
RF Power LDMOS Transistor
High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET
Designed for handheld two--way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this
device make it ideal for large--signal, common--source amplifier applications in
handheld radio equipment.
Wideband Performance (In 350–520 MHz reference circuit, 7.5 Vdc, TA = 25C, CW)
Frequency (MHz) (1)
Pin Gps D Pout (W) (dB) (%) (W)
350 0.25 15.2
435 0.25 15.5
520 0.25 15.0
Narrowband Performance (7.5 Vdc, TA = 25C, CW)
Frequency (MHz)
Gps (dB)
D (%)
520 (2)
20.7 73.9
Load Mismatch/Ruggedness
56.6 61.5 64.2
8.4 8.9 7.9
Pout (W) 8.
AFM907N Datasheet
