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NXP Semiconductors Technical Data
RF Power LDMOS Transistor
High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET
Designed for handheld two--way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large--signal, common--source amplifier applications in handheld radio equipment.
Wideband Performance (In 440–520 MHz reference circuit, 7.5 Vdc, TA = 25C, CW)
Frequency
Pin
Gps
D
Pout
(MHz)
(W)
(dB)
(%)
(W)
440–520 (1,2)
0.16
16.2
62.0
6.5
Narrowband Performance (7.5 Vdc, TA = 25C, CW)
Frequency (MHz)
Gps
D
Pout
(B)
(%)
(W)
520 (3)
20.3
70.8
6.
AFM906N Datasheet
