AFM906N
AFM906N is RF Power LDMOS Transistor manufactured by NXP Semiconductors.
NXP Semiconductors Technical Data
RF Power LDMOS Transistor
High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET
Designed for handheld two--way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large--signal, mon--source amplifier applications in handheld radio equipment.
Wideband Performance (In 440- 520 MHz reference circuit, 7.5 Vdc, TA = 25C, CW)
Frequency
Pin
Gps
D
Pout
(MHz)
(W)
(dB)
(%)
(W)
440- 520 (1,2)
Narrowband Performance (7.5 Vdc, TA = 25C, CW)
Frequency (MHz)
Gps
D
Pout
(B)
(%)
(W)
520 (3)
Load Mismatch/Ruggednes...
