AFT05MP075GNR1 Datasheet | NXP Semiconductors

Features - Characterized for Operation from 136 to 520 MHz - Unmatched Input and Output Allowing Wide Frequency Range Utilization - Integrated ESD Protection - Integrated Stability Enhancements - Wideband - Full Power Across the Band - Exceptional Thermal Performance - Extreme Ruggedness - High Linearity for: TETRA, SSB, LTE - In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13--inch Reel. Typical Applications - Output Stage VHF Band Mobile Radio - Output Stage UHF Band Mobile Radio Document Number: AFT05MP075N Rev. 1, 8/2014 AFT05MP075NR1 AFT05MP075GNR1 136- 520 MHz, 70 W, 12.5 V BROADBAND RF POWER LDMOS TRANSISTORS TO--270WB--4 AFT05MP075NR1 TO--270WBG--4 AFT05MP075GNR1 Gate A Drain A Gate B Drain B (Top View) Note: Exposed backside of the package is the source terminal for the transistors. Figure 1. Pin Connections  Freescale Semiconductor, Inc., 2013- 2014. All rights reserved. RF Device Data Freescale Semiconductor, Inc. AFT05MP075NR1 AFT05MP075GNR1 1 Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Range Operating Junction Temperature Range (1,2) Total Device Dissipation @ TC = 25C Derate above 25C Symbol VDSS VGS VDD Tstg TC TJ PD Value --0.5, +40 --6.0, +12 17, +0 --65 to +150 - 40 to +150 - 40 to +225 690 3.45 Unit Vdc Vdc Vdc C C C W W/C Table 2. Thermal Characteristics...