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AFT05MP075NR1 Datasheet Rf Power Ldmos Transistors

Manufacturer: NXP Semiconductors

AFT05MP075NR1 Overview

Freescale Semiconductor Technical Data RF Power LDMOS Transistors  Characterized for Operation from 136 to 520 MHz  Unmatched Input and Output Allowing Wide Frequency Range Utilization  Integrated ESD Protection  Integrated Stability Enhancements  Wideband — Full Power Across the Band  Exceptional Thermal Performance  Extreme Ruggedness  High Linearity for: TETRA, SSB, LTE  In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13--inch Reel. Typical Applications  Output Stage VHF Band Mobile Radio  Output Stage UHF Band Mobile Radio Document Number: AFT05MP075N Rev. 1, 8/2014 AFT05MP075NR1 AFT05MP075GNR1 136–520 MHz, 70 W, 12.5 V BROADBAND the source terminal for the transistors.

AFT05MP075NR1 Key Features

  • Characterized for Operation from 136 to 520 MHz
  • Unmatched Input and Output Allowing Wide Frequency Range Utilization
  • Integrated ESD Protection
  • Integrated Stability Enhancements
  • Wideband
  • Full Power Across the Band
  • Exceptional Thermal Performance
  • Extreme Ruggedness
  • High Linearity for: TETRA, SSB, LTE
  • In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13--inch Reel

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