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AFT05MP075GNR1 - RF Power LDMOS Transistors

Download the AFT05MP075GNR1 datasheet PDF. This datasheet also covers the AFT05MP075NR1 variant, as both devices belong to the same rf power ldmos transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Characterized for Operation from 136 to 520 MHz.
  • Unmatched Input and Output Allowing Wide Frequency Range Utilization.
  • Integrated ESD Protection.
  • Integrated Stability Enhancements.
  • Wideband.
  • Full Power Across the Band.
  • Exceptional Thermal Performance.
  • Extreme Ruggedness.
  • High Linearity for: TETRA, SSB, LTE.
  • In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13--inch Reel. Typical.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFT05MP075NR1-NXP.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Freescale Semiconductor Technical Data RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs Designed for mobile two--way radio applications with frequencies from 136 to 520 MHz. The high gain, ruggedness and broadband performance of these devices make them ideal for large--signal, common source amplifier applications in mobile radio equipment. Typical Performance: 12.5 V, TA = 25C, CW Gps D Pout Frequency (dB) (%) (W) 136 MHz 21.0 68.0 76 450--520 MHz (1) 14.6 65.8 75 520 MHz (2) 18.5 68.5 70 Load Mismatch/Ruggedness Frequency Signal (MHz) Type VSWR Pin Test (W) Voltage Result 520 (2) CW > 65:1 at all 2 Phase Angles (3 dB Overdrive) 17 No Device Degradation 1.