AFT05MP075GNR1 Description
Freescale Semiconductor Technical Data RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs Designed for mobile two--way radio applications with frequencies from 136 to 520 MHz. The high gain, ruggedness and broadband performance of these devices make them ideal for large--signal, mon source amplifier applications in mobile radio equipment. Measured in 450--520 MHz UHF broadband...
AFT05MP075GNR1 Key Features
- Characterized for Operation from 136 to 520 MHz
- Unmatched Input and Output Allowing Wide Frequency Range Utilization
- Integrated ESD Protection
- Integrated Stability Enhancements
- Wideband
- Full Power Across the Band
- Exceptional Thermal Performance
- Extreme Ruggedness
- High Linearity for: TETRA, SSB, LTE
- In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13--inch Reel