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AFT05MP075GNR1 Datasheet Rf Power Ldmos Transistors

Manufacturer: NXP Semiconductors

Overview: Freescale Semiconductor Technical Data RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs Designed for mobile two--way radio applications with frequencies from 136 to 520 MHz. The high gain, ruggedness and broadband performance of these devices make them ideal for large--signal, mon source amplifier applications in mobile radio equipment. Typical Performance: 12.5 V, TA = 25C, CW Gps D Pout Frequency (dB) (%) (W) 136 MHz 21.0 68.0 76 450--520 MHz (1) 14.6 65.8 75 520 MHz (2) 18.5 68.5 70 Load Mismatch/Ruggedness Frequency Signal (MHz) Type VSWR Pin Test (W) Voltage Result 520 (2) CW > 65:1 at all 2 Phase Angles (3 dB Overdrive) 17 No Device Degradation 1. Measured in 450--520 MHz UHF broadband reference circuit. 2. Measured in 520 MHz narrowband test circuit.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • Characterized for Operation from 136 to 520 MHz.
  • Unmatched Input and Output Allowing Wide Frequency Range Utilization.
  • Integrated ESD Protection.
  • Integrated Stability Enhancements.
  • Wideband.
  • Full Power Across the Band.
  • Exceptional Thermal Performance.
  • Extreme Ruggedness.
  • High Linearity for: TETRA, SSB, LTE.
  • In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13--inch Reel. Typical.

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